Semiconductor device fabrication method

Details Semiconductor device fabrication method Semiconductor device fabrication method

2005-08-16

2005-08-16

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S740000, C438S743000

Reexamination Certificate

active

06930035

ABSTRACT:
The present invention provides an auxiliary semiconductor device fabrication method that forms wiring113by using the wiring groove108that is formed in the sacrificial oxide film104. An interlayer insulating film is formed by removing, by means of etching, the sacrificial oxide film that is used as a mold for the wiring layer formation and then allowing the porous Low-k film to fill the region from which the sacrificial oxide film has been removed.

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patent: 6355572 (2002-03-01), Ikegami
patent: 6458708 (2002-10-01), Jin
patent: 6777307 (2004-08-01), Ramkumar et al.
patent: 6781192 (2004-08-01), Farrar
patent: 2002/0105086 (2002-08-01), Yoshie
patent: 10-284600 (1998-10-01), None

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