Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-01-25
2005-01-25
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S258000, C438S587000, C438S595000
Reexamination Certificate
active
06846732
ABSTRACT:
A semiconductor device fabrication method includes the steps of: forming a gate protection film covering a top face and side face of a gate electrode; forming an interlayer insulation film that is more readily etched than the gate protection film; removing the interlayer insulation film until the top face of the gate protection film is exposed; etching the interlayer insulation film and the gate protection film using a predetermined etchant with a resist film as a mask to form a pad contact hole; forming a conductor film; and forming a pad contact by leaving a portion of a conductor film in the pad contact hole, and removing the remaining portions of the conductor film. The fabrication method provides a semiconductor device that has a structure in which short-circuiting will not be developed between a pad contact and a gate interconnection, and between pad contacts.
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Garcia Joannie Adelle
McDermott Will & Emery LLP
Renesas Technology Corp.
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