Semiconductor device fabrication method

Details Semiconductor device fabrication method Semiconductor device fabrication method

2008-01-15

2008-01-15

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S671000, C257SE21259

Reexamination Certificate

active

07319070

ABSTRACT:
In a conductive layer fabrication method, a lower resist layer (210) is formed on a semiconductor substrate. A water soluble resin layer (212) is formed over the lower resist layer. Heat treatment is performed so as to produce a cross-linking layer (211) between the lower resist layer and the water soluble resin layer, the cross-linking layer being insoluble in an organic material. A resist containing a photosensitizing agent is applied to form an upper resist layer (214) over the cross-linking layer. The upper and lower resist layers are irradiated by a beam through a photomask. A portion of the upper resist layer and a portion of the cross-linking layer are removed through development to form an upper opening. A portion of the lower resist layer is removed using a developer to form a lower opening. Then a conductive layer (302) is formed on the semiconductor substrate through the upper and lower openings.

REFERENCES:
patent: 6555607 (2003-04-01), Kanda et al.
patent: 6579657 (2003-06-01), Ishibashi et al.
patent: 6663761 (2003-12-01), Kamijima
patent: 2006/0160015 (2006-07-01), Takano et al.
patent: 6-5631 (1994-01-01), None
patent: 8-272107 (1996-10-01), None

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