Semiconductor device fabrication method

Details Semiconductor device fabrication method Semiconductor device fabrication method

2011-03-15

2011-03-15

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C257SE21577, C257SE21578

Reexamination Certificate

active

07906431

ABSTRACT:
Methods of fabricating a semiconductor device including a through-silicon via that is electrically insulated from the semiconductor substrate. An exemplary method includes preparing a semiconductor wafer including a semiconductor substrate, a semiconductor element, an interlayer insulating, pads that are electrically connected to the semiconductor element, and a protective film; forming upper terminals electrically connected to the pads; forming annular grooves below the pads and extending to the interlayer insulating film; forming an annular insulating layer in the annular grooves and forming a bottom insulating film on the bottom surface of the semiconductor substrate; forming electrode-forming extending to the pads; filling the electrode-forming holes with a conductive material to form through-silicon vias electrically connected to the pads; and forming lower terminals on the bottom insulating film electrically connected to the through-silicon vias.

REFERENCES:
patent: 7399683 (2008-07-01), Noma et al.
patent: 7589390 (2009-09-01), Yao
patent: 2007-180529 (2007-12-01), None

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