Semiconductor device fabrication method

Details Semiconductor device fabrication method Semiconductor device fabrication method

2011-08-23

2011-08-23

Thai, Luan C (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S696000, C438S652000, C438S637000

Reexamination Certificate

active

08003518

ABSTRACT:
A semiconductor device fabrication method including the steps of: forming an interlayer insulating film on a substrate; forming an opening in the interlayer insulating film; forming an alloy layer containing manganese and copper to cover the inner surface of the opening; forming a first copper layer of a material containing primarily copper on the alloy layer to fill the opening; forming, on the first copper layer, a second copper layer of a material containing primarily copper and a higher concentration of oxygen, carbon or nitrogen than the first copper layer; heating the substrate on which the second copper layer has been formed; and removing the second copper layer.

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International Search Report for PCT/JP2007/056368, mailing date of Jun. 12, 2007.

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