Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2011-08-09
2011-08-09
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S787000
Reexamination Certificate
active
07994035
ABSTRACT:
There is provided a method of fabricating a semiconductor device in which a gate electrode is formed on an oxide film, which is formed by thermal oxidation on a substrate. The fabrication method includes: a first step of forming a first oxide film on the substrate; a second step of thermally processing the first oxide film in an inactive gas atmosphere; a third step of forming a second oxide film that is obtained by etching the first oxide film, which has been thermally processed in the inactive gas, to a predetermined film thickness; and a fourth step of forming and thermally processing a gate electrode on the second oxide film.
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Brewster William M.
Oki Semiconductor Co., Ltd.
Rabin & Berdo PC
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