Semiconductor device fabricating method having a gettering step

Details Semiconductor device fabricating method having a gettering step Semiconductor device fabricating method having a gettering step

1997-10-15

1999-04-20

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Gettering of semiconductor substrate

438471, 438476, 438402, 438310, H01L 218232

Patent

active

058952365

ABSTRACT:
A device isolation region and a gate oxide film are formed on a front surface of a silicon substrate, with a gate electrode formed on the gate oxide film. Next, an interlayer insulator film is formed on their entire surfaces. Then, polycrystalline silicon film is grown on the rear surface of the silicon substrate. The polycrystalline silicon film is deposited in such a way as to be in contact with the rear surface of the substrate. Then, to permit the polycrystalline silicon film formed at the rear surface of the silicon substrate to getter a pollution heavy metal, a heat treatment is performed for the substrate at a temperature of 500 to 900.degree. C. After this gettering process, an interconnection line is formed on the interlayer insulator film.

REFERENCES:
patent: 4608096 (1986-08-01), Hill
patent: 4766086 (1988-08-01), Ohshima et al.
patent: 4824698 (1989-04-01), Jastrzebski et al.
patent: 5360748 (1994-11-01), Nadahara et al.

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