Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2007-03-13
2008-11-04
Smith, Matthew S. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S649000, C438S479000, C438S786000, C438S791000
Reexamination Certificate
active
07446394
ABSTRACT:
A semiconductor device in which selectivity in epitaxial growth is improved. There is provided a semiconductor device comprising a gate electrode formed over an Si substrate, which is a semiconductor substrate, with a gate insulating film therebetween and an insulating layer formed over sides of the gate electrode and containing a halogen element. With this semiconductor device, a silicon nitride film which contains the halogen element is formed over the sides of the gate electrode when an SiGe layer is formed over the Si substrate. Therefore, the SiGe layer epitaxial-grows over the Si substrate with high selectivity. As a result, an OFF-state leakage current which flows between, for example, the gate electrode and source/drain regions is suppressed and a manufacturing process suitable for actual mass production is established.
REFERENCES:
patent: 5864161 (1999-01-01), Mitani et al.
patent: 6342421 (2002-01-01), Mitani et al.
patent: 7105411 (2006-09-01), Akram et al.
patent: 2005/0280098 (2005-12-01), Shin et al.
patent: 2006/0022228 (2006-02-01), Hoshi et al.
patent: 2004-363199 (2004-12-01), None
T.I. Kamins et al., “Influence of HCI of the chemical vapor deposition and etching of Ge islands on Si(00)”; Applied Physics Letters, vol. 73, No. 13, pp. 1862-1864.
Fukuda Masahiro
Koizuka Masaaki
Ookoshi Katsuaki
Shimamune Yosuke
Fujitsu Limited
Smith Matthew S.
Swanson Walter H
Westerman Hattori Daniels & Adrian LLP
LandOfFree
Semiconductor device fabricated by selective epitaxial... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device fabricated by selective epitaxial..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device fabricated by selective epitaxial... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4037825