Semiconductor device fabricated by a method of reducing the...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S199000, C438S685000, C257SE21438

Reexamination Certificate

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07320939

ABSTRACT:
A semiconductor device, fabricated by a method, having a semiconductor structure with a silicon region which forms at least one connection region in and/or on a surface of a substrate is disclosed. In one embodiment, the method includes i) forming, at least at the silicon region, a metal cluster layer from a first metal, such that, in the metal cluster layer, metal clusters alternate with sites where there are no metal clusters, the first metal being a non-siliciding metal at predetermined conditions, ii) depositing a metal layer of a second metal on top of the metal cluster layer, the second metal being a siliciding metal and iii) carrying out at least one heat treatment at the predetermined conditions on the second metal layer so as to form metal silicide through reaction of the second metal with the silicon region, wherein atoms of the first metal are displaced in a direction substantially perpendicular to the surface of the substrate.

REFERENCES:
patent: 5851891 (1998-12-01), Dawson et al.
patent: 6177319 (2001-01-01), Chen
patent: 6211000 (2001-04-01), Gardner et al.
patent: 6281556 (2001-08-01), Gerritsen et al.
patent: 6372566 (2002-04-01), Kittl et al.
patent: 6440806 (2002-08-01), Xiang
patent: 6967160 (2005-11-01), Paton et al.
patent: 7122410 (2006-10-01), Kammler et al.
patent: 2001/0053601 (2001-12-01), Mogami
patent: 2002/0011636 (2002-01-01), Yasuo et al.
patent: 0651076 (1995-05-01), None
patent: WO 03/075330 (2003-09-01), None
Journal of Materials Research, vol. 12, No. 1-12 (1997).
Maszara et al., “Transistors with Dual Work Function Metal Gates by Single Full Silicidation (FUSI) of polysilicon Gates”, (2002) IEEE pp. 367-370.

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