Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – With electric field controlling semiconductor layer having a...
Patent
1992-07-14
1994-06-07
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
With electric field controlling semiconductor layer having a...
257492, 257487, 257494, 257546, 257271, 257274, 257328, 257329, 257355, 257357, 257366, 257367, 257369, 257373, 257393, 257409, H01L 2940, H01L 2702, H01L 2968, H01L 2978
Patent
active
053192362
ABSTRACT:
The invention provides a semiconductor device equipped with a high-voltage MISFET capable of forming a push-pull circuit on one chip by optimizing a junction-separation structure. In an n-channel MOSFET, when a potential is applied to the gate electrode, to the source electrode, and across the drain electrode and the semiconductor substrate to expand the depletion layer from the junction face of a semiconductor substrate and a well formed thereon, the leading edge of the depletion layer does not reach a low-concentration drain diffusion region formed on the well. When a potential is applied to the drain electrode, to the semiconductor substrate, and across the source electrode and the gate electrode to expand a depletion layer from the junction face of the low-concentration drain diffusion region and the well, and a depletion layer from the junction face of semiconductor substrate and the well, the depletion layers are connected with each other.
REFERENCES:
patent: 4928159 (1990-05-01), Mihara et al.
patent: 5008719 (1991-04-01), Schrantz
patent: 5047358 (1991-09-01), Kosiak et al.
Fuji Electric & Co., Ltd.
Jackson Jerome
Tang Alice W.
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