Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified encapsulant
Reexamination Certificate
2011-06-28
2011-06-28
Feely, Michael J (Department: 1761)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With specified encapsulant
C257S788000, C257S793000, C257S795000, C428S413000, C523S440000, C523S443000, C523S466000
Reexamination Certificate
active
07969027
ABSTRACT:
A semiconductor device comprising an organic substrate, at least one semiconductor chip provided on a surface of the substrate, and a cured resin composition encapsulating the semiconductor chip provided on the surface of the substrate, characterized in that an absolute value of a distance between an imaginary line connecting two diagonally opposite corners of the substrate and a highest or lowest position on the surface of the substrate between the corners is smaller than 600 μm, as measured with a laser three-dimensional measuring instrument, a total volume ratio of the semiconductor chip to the semiconductor device ranges from 18 to 50%, and the cured resin composition comprises an inorganic filler (C) in such an amount that a weight ratio of the inorganic filler (C) to a total weight of the cured resin composition ranges from 80 to 90%.
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Birch & Stewart Kolasch & Birch, LLP
Feely Michael J
Shin-Etsu Chemical Co. , Ltd.
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