Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-05-15
2007-05-15
Owens, Douglas W. (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S479000, C438S517000
Reexamination Certificate
active
10891626
ABSTRACT:
A semiconductor device employing a PD-SOI substrate and a method of manufacturing the same are capable of minimizing a floating body effect. The semiconductor device employs a silicon layer over a buried insulating layer on a silicon wafer, isolating layers in the silicon layer in contact with the buried insulating layer, a body layer of a first conductivity type in the silicon layer between the isolating layers and having a trench, a gate insulating layer and a gate electrode in the trench of the body layer, a spacer on the sidewall of the gate electrode, LDD regions of a second conductivity type in the body layer on both sides of the gate electrode in contact with the buried insulating layer under the trench, and source and drain regions of the second conductivity type the body layer on both sides of the spacer in contact with the buried insulating layer.
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patent: 2003/0218193 (2003-11-01), Hayashi et al.
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Owens Douglas W.
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