Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1994-03-08
1996-10-29
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 57, 257 59, 257 72, 257350, H01L 2976, H01L 2904, H01L 31036, H01L 2701
Patent
active
055699367
ABSTRACT:
A substance containing a catalyst element is formed so as to closely contact with an amorphous silicon film, or a catalyst element is introduced into the amorphous silicon film. The amorphous silicon film is annealed at a temperature which is lower than a crystallization temperature of usual amorphous silicon, thereby selectively crystallizing the amorphous silicon film. The crystallized region is used as a crystalline silicon TFT which can be used in a peripheral driver circuit of an active matrix circuit. The region which remains amorphous is used as an amorphous silicon TFT which can be used in a pixel circuit. A relatively small amount of a catalyst element for promoting crystallization is added to an amorphous silicon film, and an annealing process is conducted at a temperature which is lower than the distortion temperature of a substrate, thereby crystallizing the amorphous silicon film. A gate insulating film, and a gate electrode are then formed, and an impurity is implanted in a self-alignment manner. A film containing a catalyst element for promoting crystallization is closely contacted with the impurity region, or a relatively large amount of a catalyst element is introduced into the impurity region by an ion implantation or the like. Then, an annealing process is conducted at a temperature which is lower than the distortion temperature of the substrate, thereby activating the doping impurity.
REFERENCES:
patent: 4746628 (1988-05-01), Takafuji et al.
patent: 5124769 (1992-06-01), Tanaka et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5403772 (1995-04-01), Zhang et al.
C. Hayzelden et al., "In Situ Transmission Electron Microscopy Studies of Silicide-Mediated Crystallization of Amorphous Silicon" (3 pages).
A. V. Dvurechenskii et al., "Transport Phenomena in Amorphous Silicon Doped by Ion Implantation of 3d Metals", Akademikian Lavrentev Prospekt 13, 630090 Novosibirsk 90, USSR, pp. 635-640.
T. Hempel et al., "Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin Films", Solid State Communications, vol. 85, No. 11, pp. 921-924, 1993.
Takayama Toru
Takemura Yasuhiko
Uochi Hideki
Yamamoto Mutsuo
Zhang Hongyong
Ferguson Jr. Gerald J.
Loke Steven H.
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Semiconductor device employing crystallization catalyst does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device employing crystallization catalyst, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device employing crystallization catalyst will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1787757