Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-02-20
2007-02-20
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S150000, C438S164000, C438S166000, C257SE29151
Reexamination Certificate
active
11095954
ABSTRACT:
A method of manufacturing a semiconductor device includes an origin part forming process in order to form a plurality of origin parts, each of which serves as an origin for crystallization of a semiconductor film on a substrate, a semiconductor film forming process to form the semiconductor film on the substrate where the origin parts have been formed, and a thermal treatment process in which the semiconductor film is thermally treated in order to form a plurality of nearly single crystalline grains, each of which is almost centered at each of the plurality of origin parts. The method further includes a patterning process to carry out patterning the semiconductor film in order to form a transistor region and an element forming process to form a gate insulation film and a gate electrode on the transistor region so as to form a thin film transistor, wherein the origin parts are formed in such a manner that the nearly single crystalline grains are included in the source region and drain region of the patterning process.
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