Semiconductor device, electro-optic device, integrated...

Details Semiconductor device, electro-optic device, integrated... Semiconductor device, electro-optic device, integrated...

2006-12-12

2006-12-12

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S486000, C438S487000

Reexamination Certificate

active

07148095

ABSTRACT:
A method of manufacturing a semiconductor is provided. The method includes the steps of forming a priming insulation film on a substrate, forming a first insulation film on the priming insulation film, forming an opening with a diameter of d1in the first insulation film, and forming a second insulation film on the first insulation film including the opening The film thickness distribution of the second insulation film in the step of forming the second insulation film is ±y %, wherein the diameter d1of the opening satisfies the following relationship: d1≦6500/y+85 nm.

REFERENCES:
patent: 2003/0034523 (2003-02-01), Hiroshima
patent: 2003/0183875 (2003-10-01), Isobe et al.
patent: 2003/0197222 (2003-10-01), Hara et al.
patent: 2003/0218171 (2003-11-01), Isobe et al.
patent: 11-087243 (1999-03-01), None
“Single Crystal Thin Film Transistors,” IBM Tech. Bull., Aug. 1993, pp. 257-258.
R. Ishihara et al., “Advanced Excimer-Laser Crystallization Techniques of Si thin-Film for Location Control of Large Grain on Glass,” Proc. SPIE vol. 4295 (2001), pp. 14-23.

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