Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-25
2005-01-25
Ngo, Ngan V (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S356000, C257S361000
Reexamination Certificate
active
06847083
ABSTRACT:
This invention provides a semiconductor device that does not cause a defect at an intersection of wirings even when a surge voltage enters from a signal input terminal, an electro-optic device provided with the semiconductor device as a TFT array substrate, and an electronic instrument. In a TFT array substrate of a liquid crystal device, a signal input terminal, and terminals are arranged along a substrate side, and a signal input line extends from the signal input terminal to a substrate side. Of constant potential lines that supply constant potential to an electrostatic protection circuit for the signal input line, a low potential line does not at all intersect the signal input line, and a high potential line, though intersecting the signal input line, does not intersect a wiring portion from the signal input terminal to the electrostatic protection circuit. Accordingly, even when a surge voltage enters from the signal input terminal, heat generation is not caused at an intersection between the signal input line and the low potential line by surge voltage.
REFERENCES:
patent: 4876584 (1989-10-01), Taylor
patent: 5182220 (1993-01-01), Ker et al.
patent: 6078068 (2000-06-01), Tamura
patent: 6169312 (2001-01-01), Hiraga
patent: 05-307191 (1993-11-01), None
Ngo Ngan V
Oliff & Berridg,e PLC
Seiko Epson Corporation
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