Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2006-08-01
2006-08-01
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C257SE21470, C257S002000
Reexamination Certificate
active
07084052
ABSTRACT:
A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.
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US 6,048,757, 04/2000, Takemura (withdrawn)
Hirano Kiichi
Morimoto Yoshihiro
Sotani Naoya
Yamaji Toshifumi
Yoneda Kiyoshi
Arent Fox PLLC.
Coleman W. David
Sanyo Electric Co,. Ltd.
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