Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-01-04
1997-03-25
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257104, 257106, 257369, 257409, 257355, 257356, 257357, 257605, H01L 2976, H01L 29861, H01L 2362, H01L 31107
Patent
active
056147520
ABSTRACT:
A semiconductor device that includes at least one MOS transistor that is formed on a semiconductor substrate, in which there is a structure for protecting circuit elements such as transistors from excessive static electricity from the outside, such as surge input and static electricity generated during the production process. Transistors and diodes are formed so that contact is made between a high impurity concentration diffusion region that forms the source or drain and a low impurity concentration diffusion region that has a conductivity opposite that of the high impurity concentration diffusion region that forms an LDD structure transistor offset. By making contact between a high impurity concentration diffusion region and a low impurity concentration diffusion region, there is formed a circuit element that reduces the junction breakdown voltage. In addition, by using the offset of the CMOS structure, there is no increase in the number of production process steps.
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Loke Steven H.
Seiko Epson Corporation
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