Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-04-16
1998-07-28
Monin, Donald
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257318, 257322, H01L 218247
Patent
active
057866120
ABSTRACT:
Each of source regions (4) is provided only immediately below a bottom surface (3B) of each of trenches (3) which is formed in a silicon substrate (1), extending inward from a main surface (1S) thereof along a second direction, and each of gate electrode portions (23) is provided inside each of the trenches (3). Specifically, each of the gate electrode portions (23) consists of a gate oxide film (19) formed on a side surface (S1) and part of the bottom surface (3B) of the trench (3), an FG electrode (20) formed thereon, a gate insulating film (21) formed on a side surface of the FG electrode (20) which is out of contact with the gate oxide film (19), an upper surface of the FG electrode (20), a side surface (2S) and the other part of the bottom (3B) of the trench (3), and a CG electrode (22) formed so as to cover an upper surface of the gate insulating film (21). Each of drain regions (11) is shared by the two adjacent transistors. The device configuration as above achieves reduction in area of the gate electrode portions (23) and further reduction in each level difference between both regions having and not having the gate electrode portion (23). Thus, reduction in level difference of each memory cell is achieved while reduction in area of each memory cell is ensured.
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Katayama Toshiharu
Otani Naoko
Mitsubishi Denki & Kabushiki Kaisha
Monin Donald
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