Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-22
2007-05-22
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S197000, C438S199000, C438S584000, C438S585000, C438S586000, C438S597000, C438S658000, C438S659000, C438S660000, C438S663000, C438S664000, C438S674000, C438S683000, C438S684000, C438S685000
Reexamination Certificate
active
11052107
ABSTRACT:
The invention provides a semiconductor device, and a manufacturing method, comprising a semiconductor substrate, a gate insulating film, a gate electrode, and a source-drain diffusion layer. A silicide film is formed on the gate electrode and the source-drain diffusion layer. The silicide film is thicker on the gate electrode than on the source-drain diffusion layer. The manufacturing method comprises forming a gate electrode on a gate insulating film, followed by forming a source-drain diffusion layer. Then, atoms inhibiting a silicidation are selectively introduced into the source-drain diffusion layer, and a high melting point metal film is formed on the gate electrode and the source-drain diffusion layer. The high melting point metal film is converted into silicide films selectively on the gate electrode and the source-drain diffusion layer. The method permits retarding the formation of the silicide film on the source-drain diffusion layer to obtain a semiconductor device in which the silicide film on the gate electrode is thicker than the silicide film on the source-drain diffusion layer.
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Miyashita Katsura
Takagi Mariko
Yoshimura Hisao
Au Bac H.
Kabushiki Kaisha Toshiba
Pillsbury Winthrop Shaw & Pittman LLP
Smith Zandra V.
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