Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-29
2010-12-14
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S339000, C257SE29260, C257SE29258, C438S270000, C438S589000
Reexamination Certificate
active
07851853
ABSTRACT:
The high-withstand voltage MOSFET comprises a trench portion formed at the high-withstand voltage active region on a semiconductor substrate, two polysilicon layers formed on the high-withstand voltage active region on both sides of the trench portion by implanting an impurity of the conductivity type opposite to the high-withstand voltage active region, two impurity diffusion drift layers formed on both sides of the trench portion by implanting an impurity of the conductivity type opposite to the high-withstand voltage active region in the surface of the high-withstand voltage active region under the polysilicon layers, and a gate electrode formed through a gate oxide film on bottom and side surfaces of the trench portion and end surfaces and upper surfaces of adjacent regions of the polysilicon layers close to the trench portion, and source and drain regions are formed in the two polysilicon layers excluding the adjacent regions covered with the gate electrode.
REFERENCES:
patent: 4419810 (1983-12-01), Riseman
patent: 6518623 (2003-02-01), Oda et al.
patent: 7675110 (2010-03-01), Uchiyama
patent: 2004/0089892 (2004-05-01), Suzuki
patent: 6-151453 (1994-05-01), None
patent: 2002-343963 (2002-11-01), None
Hikida Satoshi
Otabe Takuya
Yonemoto Hisashi
Mandala Victor A
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
Stowe Scott
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