Semiconductor device comprising circuit substrate with...

Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure

Reexamination Certificate

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Details

C257S700000, C257S687000, C257S777000

Reexamination Certificate

active

07932517

ABSTRACT:
A semiconductor device includes a first circuit substrate having a plurality of lower wiring lines and a plurality of upper wiring lines on the lower surface side and upper surface side thereof, respectively. A second circuit substrate is provided on a lower side of the first circuit substrate, the second circuit substrate having an opening which exposes part of the first circuit substrate, the second circuit substrate also having, on the lower surface side thereof, a plurality of external-connection connection pads and a plurality of test connection pads connected to the lower wiring lines. A first semiconductor construct is disposed on the lower side of the first circuit substrate within the opening of the second circuit substrate, the first semiconductor construct having a plurality of external connection electrodes connected to the lower wiring lines. A third circuit substrate and/or an electronic component is provided on an upper side of the first circuit substrate and connected to the upper wiring lines.

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The International Search Report and the Written Opinion of the International Searching Authority dated Aug. 22, 2008, issued in a counterpart International Application. 16 sheets.
Chinese Office Action dated Jun. 2, 2010 and English translation thereof, issued in counterpart Chinese Application No. 200880004282.5.
Japanese Office Action dated Sep. 7, 2010 (and English translation thereof) in counterpart Japanese Application No. 2007-087662.

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