Semiconductor device comprising capacitive elements

Details Semiconductor device comprising capacitive elements Semiconductor device comprising capacitive elements

2011-07-26

2011-07-26

Quach, Tuan N. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S532000, C257SE29342

Reexamination Certificate

active

07985996

ABSTRACT:
A technology capable of reducing the fraction defective of a MOS capacitor without the need to perform a screening is provided. A MOS capacitor MOS1and a MOS capacitor MOS2are coupled in series between a high potential and a low potential to form a series capacitive element. Then, a polysilicon capacitor PIP1and a polysilicon capacitor PIP2are coupled in parallel with the series capacitive element. Specifically, a high-concentration semiconductor region HS1constituting a lower electrode of the MOS capacitor MOS1and a high-concentration semiconductor region HS2constituting a lower electrode of the MOS capacitor MOS2are coupled. Further, an electrode E1constituting an upper electrode of the MOS capacitor MOS1is coupled to the low potential (for example, GND) and an electrode E3constituting an upper electrode of the MOS capacitor MOS2is coupled to the high potential (for example, power source potential).

REFERENCES:
patent: 6351020 (2002-02-01), Tarabbia et al.
patent: 6777776 (2004-08-01), Hieda
patent: 7855431 (2010-12-01), Park et al.
patent: 7884409 (2011-02-01), Kim et al.
patent: 2008/0283889 (2008-11-01), Haraguchi et al.
patent: 2009/0159946 (2009-06-01), Huang et al.
patent: 2003-060042 (2003-02-01), None

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