Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-19
2005-07-19
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S347000, C257S350000, C257S368000, C257S389000, C257S638000, C257S900000
Reexamination Certificate
active
06919606
ABSTRACT:
A semiconductor device includes a semiconductor layer of a first conductive type formed in an active region, a first gate electrode formed on the semiconductor layer via a gate insulating film in a predetermined pattern, a first insulating mask formed on at least a part of the first gate electrode and a part of the semiconductor layer, and a pair of first diffusion regions of a second conductive type formed in the active region not covered with the first insulating mask and first gate electrode. The pair of first diffusion regions is positioned adjacent to the first gate electrode and being used as a source and drain.
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Kerry Bernstein, et al., “SOI Circuit Design Concepts”, SOI Device Structures, 2000, Chap. 2, Sec. 2.4.2, pp 22-23.
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Thomas Tom
Warren Matthew E.
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