Semiconductor device comprising a layered structure grown on a s

Details Semiconductor device comprising a layered structure grown on a s Semiconductor device comprising a layered structure grown on a s

1991-10-24

1992-10-06

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 45, 357 17, H01S 319

Patent

active

051538903

ABSTRACT:
A semiconductor device such as a laser diode grown on a structured substrate surface having horizontal regions and adjacent inclined sidewall surfaces. The horizontal regions are of standard orientation while the inclined surfaces are misoriented. The layers forming the device are grown on top of a structured surface, with at least the active layer of the semiconductor material assuming an ordered state which depends on the orientation of the substrate surface. The center section of the active layer is deposited on top of a horizontal region. This section is in the ordered state and has a lower bandgap energy than the terminating sections which are grown on the inclined regions and which exhibit a wider bandgap. The active layer can be terminated in either lateral direction with wider bandgap materials so that buried devices can be obtained that provide strongly confined and non-absorbing mirrors.

REFERENCES:
patent: 4791649 (1988-12-01), Yamamoto et al.
patent: 5010556 (1991-04-01), Imanaka et al.
patent: 5115443 (1992-05-01), Miyazawa
"Dependence of Photoluminescense Peak Energy of MOVPE-grown AlGInP on Substrate", by S. Minagawa, et al., in Electronics Letters, vol. 25, No. 12, Jun. 8, 1989, pp. 785-759.
"Novel Window-Structure AlGaInP Visible-Light Laser Diodes with Non-Absorbing Facets Fabricated by Utilizing GaInP Natural Superlattice Disordering", by Y. Uena, et al., in Japanese Journal of Applied Physics, vol. 28, No. 9, part 2, Sep. 1990, pp. L1666-L1668.
"Compositional Modulation in Al.sub.l-x Ga.sub.1 As Epilayers Grown by Molecular Beam Epitaxy on the (111) Facets of Grooves in a Non-Planar Substrate", by M. E. Hoenk, et al., in Applied Physics Letters, vol. 55, No. 1, Jul. 3, 1989, pp. 53-55.
"Evidence for the Existence of an Ordered State in Ga.sub.0.5 In.sub.0.5 P Grown by Metalorganic Vapor Phawe Expitaxy and its Relation to Band-gap Energy", by A. G. T. Suzuki, et al., in Allied Physics Letters, vol. 50, No. 11, Mar. 16, 1987, pp. 673-675.

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