Semiconductor device comprising a contact structure based on...

Details Semiconductor device comprising a contact structure based on... Semiconductor device comprising a contact structure based on...

2011-03-08

2011-03-08

Lindsay, Jr., Walter L (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S618000, C257SE21620, C257SE21641

Reexamination Certificate

active

07902581

ABSTRACT:
By providing contact plugs having a lower plug portion, formed on the basis of well-established tungsten-based technologies, and an upper plug portion, which may comprise a highly conductive material such as copper or a copper alloy, a significant increase in conductivity of the contact structure may be achieved. For this purpose, after the deposition of a first dielectric layer of the inter-layer stack, a planarization process may be performed so as to allow the formation of the lower plug portions on the basis of tungsten, while, after the deposition of the second dielectric layer, a corresponding copper-based technology may be used for forming the upper plug portions of significantly enhanced conductivity.

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