Semiconductor device comprising a capacitor using a...

Details Semiconductor device comprising a capacitor using a... Semiconductor device comprising a capacitor using a...

2005-08-02

2005-08-02

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S532000

Reexamination Certificate

active

06924521

ABSTRACT:
A semiconductor device comprises a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode and made of a perovskite type ferroelectrics containing Pb, Zr, Ti and O, the dielectric film comprising a first portion formed of a plurality of crystal grains partitioned by grain boundaries having a plurality of directions.

REFERENCES:
patent: 5635420 (1997-06-01), Nishioka
patent: 6287637 (2001-09-01), Chu et al.
patent: 6495872 (2002-12-01), Nakamura
patent: 2001/0014482 (2001-08-01), Agarwal et al.
patent: 0 821 415 (1998-01-01), None
patent: 2000-156473 (2000-06-01), None

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