Semiconductor device comprising a bipolar transistor

Details Semiconductor device comprising a bipolar transistor Semiconductor device comprising a bipolar transistor

1998-04-14

2000-11-07

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257370, 257350, 257273, H01L 2976, H01L 2701, H01L 2980

Patent

active

061440779

ABSTRACT:
A semiconductor device is provided in its base region with an emitter region consisting of a p-type first impurity layer having a first impurity concentration peak at a first depth and a p-type second impurity layer having an impurity concentration peak at a second depth, and ohmic contact is provided in the p-type second impurity layer. Due to this structure, the operability of an SRAM memory cell defining an emitter region of a bipolar transistor by a source/drain region of a MOS transistor can be improved.

REFERENCES:
patent: 3893085 (1975-07-01), Hansen
patent: 5198692 (1993-03-01), Momose
patent: 5471419 (1995-11-01), Sankaranarayanan et al.
patent: 5483483 (1996-01-01), Choi et al.
patent: 5583363 (1996-12-01), Momose et al.

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