Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated
Reexamination Certificate
2006-10-05
2009-02-24
Clark, S. V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
C257S783000, C257S778000
Reexamination Certificate
active
07495345
ABSTRACT:
A semiconductor device-composing substrate10has a support base12, an interconnect layer14including interconnects13, and an insulating resin layer16. The semiconductor device-composing substrate10also has a mounting region D1on which a semiconductor chip30is to be mounted. The insulating resin layer16is formed on the interconnect layer14. Chip-connecting electrodes17, external electrode pads18and the resin stopper patterns19are formed in the insulating resin layer16. The chip-connecting electrodes17are provided in the mounting region D1. The external electrode pads18are provided outside the mounting region D1. The resin stopper patterns19are provided between the mounting region D1and the external electrode pads18.
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Kawano Masaya
Kurita Yoichiro
Soejima Koji
Clark S. V
McGinn IP Law Group PLLC
NEC Electronics Corporation
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