Semiconductor device-composing substrate and semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated

Reexamination Certificate

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C257S783000, C257S778000

Reexamination Certificate

active

07495345

ABSTRACT:
A semiconductor device-composing substrate10has a support base12, an interconnect layer14including interconnects13, and an insulating resin layer16. The semiconductor device-composing substrate10also has a mounting region D1on which a semiconductor chip30is to be mounted. The insulating resin layer16is formed on the interconnect layer14. Chip-connecting electrodes17, external electrode pads18and the resin stopper patterns19are formed in the insulating resin layer16. The chip-connecting electrodes17are provided in the mounting region D1. The external electrode pads18are provided outside the mounting region D1. The resin stopper patterns19are provided between the mounting region D1and the external electrode pads18.

REFERENCES:
patent: 6011315 (2000-01-01), Toyosawa et al.
patent: 6255740 (2001-07-01), Tsuji et al.
patent: 2003/0001244 (2003-01-01), Araki et al.
patent: 2006/0252183 (2006-11-01), Fujimoto et al.
patent: 2008/0191294 (2008-08-01), Ohta
patent: 2008/0199979 (2008-08-01), Kikuchi et al.
patent: 10-12770 (1998-01-01), None
patent: 2003-324182 (2003-11-01), None

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