Semiconductor device capacitor manufactured by forming stack wit

Details Semiconductor device capacitor manufactured by forming stack wit Semiconductor device capacitor manufactured by forming stack wit

1995-08-31

1998-02-03

Tsai, Jey

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 218242

Patent

active

057144010

ABSTRACT:
A method is provided for manufacturing a capacitor of a semiconductor device. First, an insulating layer, an etching barrier layer, a first material layer and a second material layer are sequentially stacked on a semiconductor substrate on which a field oxide layer and a gate electrode are formed, and predetermined portions of the stacked layers are sequentially etched to form a contact hole exposing the substrate. Then, a first conductive layer is formed on thge whole surface of the resultant structure having the contact hole. Subsequently, a storage electrode pattern is formed by patterning the first conductive layer and etching the second material layer. Then, a second conductive layer is formed on the whole surface of the resultant structure so as to cover the storage electrode pattern and the first material layer. Thereafter, the second conductive layer is etched to expose the upper surface of the storage electrode pattern. Therefore, the capacitor manufacturing process, particularly, the etching process, is simplified, and can be applied to a capacitor having a COB structure.

REFERENCES:
patent: 5447878 (1995-09-01), Park et al.

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