Semiconductor device capable of previously evaluating characteri

Details Semiconductor device capable of previously evaluating characteri Semiconductor device capable of previously evaluating characteri

1993-10-29

1995-05-23

Loke, Steven Ho Yin

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

257328, 257337, 257356, 257500, H01L 2358, H01L 2976, H01L 2994, H01L 2362

Patent

active

054183839

ABSTRACT:
At least one power output element made of an insulated gate semiconductor element, a surge protection element for an input electrode of the power output element, and a circuit element block for controlling the power output element, are formed on the same semiconductor substrate. A predetermined electrode of the power output element and one end of the surge protection element are connected to each other. In this state, first, second, and third electrode wiring layers are connected to an output terminal of the circuit element block, the other end of the surge protection element, and the input electrode of the power output element, respectively, and the first to third electrode wiring layers are formed separately from one another. In order to connect the first to third electrode wiring layers to each other, a fourth electrode wiring layer is formed thereon. Thus, a characteristic of the power output element is previously evaluated before the fourth electrode wiring layer is formed, using at least the third electrode wiring layer.

REFERENCES:
patent: 3585712 (1971-06-01), Boncuk
patent: 3999212 (1976-12-01), Usuda
patent: 4104785 (1978-08-01), Shiba et al.
IBM Technical Disclosure Bulletin, vol. 13, No. 10, pp. 2844, Mar. 1971, P. Evrenidis, et al., "Temporary Elimination of Protective Diode".
Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs, pp. 242-247, Apr. 22-24, 1991, T. Fujihira, et al., "Self-Isolation NMOS-DMOS Technology for Automotive Low-Side Switches".

Affiliated with

Also associated with

Rating

Semiconductor device capable of previously evaluating characteri does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device capable of previously evaluating characteri, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device capable of previously evaluating characteri will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2141646