Semiconductor device capable of preventing current flow...

Details Semiconductor device capable of preventing current flow... Semiconductor device capable of preventing current flow...

2007-12-18

2007-12-18

Le, Thao X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S355000, C257S370000, C257S361000, C257SE27063

Reexamination Certificate

active

10815448

ABSTRACT:
A semiconductor device includes first, second, and third wells. The first well is connected to a pad to which an external pin is connected and includes a first-type diffusion region that receives a well bias voltage. The second well is adjacent to the first well, and includes an insulating region and a second-type diffusion region outside the insulating region. The third well is adjacent to the second well and includes a first-type diffusion region that receives a first voltage. The insulating region inside the second well along with the first-type well diffusion region of the first well constitute a bipolar junction transistor that cuts off current flowing from the first well to the third well.

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