Active solid-state devices (e.g. – transistors – solid-state diode – Including region containing crystal damage
Patent
1992-12-08
1994-02-22
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Including region containing crystal damage
257913, 257156, 257 41, H01L 2974, H01L 2358, H01L 2930
Patent
active
052890317
ABSTRACT:
A semiconductor device comprises a semiconductor substrate having first and second major surfaces, semiconductor elements formed on the first surface of the semiconductor substrate, and a blocking layer formed within the substrate at a given distance from the second major surface for blocking the passage of heavy metals through the semiconductor substrate.
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Journal of Applied Physics "Gettering in Silicon", J. S Kang and D. K Schroder, vol. 65, pp. 2974-2985, Apr. 1989.
Solid State Technology, vol. 33, pp. S1-S7 "Contamination Control: Problems and Prospects", T. Hattori, Jul. 1990.
Kunishima Yoshiko
Watanabe Masaharu
Fahmy Wael
Hille Rolf
Kabushiki Kaisha Toshiba
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