Semiconductor device capable of blocking contaminants

Active solid-state devices (e.g. – transistors – solid-state diode – Including region containing crystal damage

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257913, 257156, 257 41, H01L 2974, H01L 2358, H01L 2930

Patent

active

052890317

ABSTRACT:
A semiconductor device comprises a semiconductor substrate having first and second major surfaces, semiconductor elements formed on the first surface of the semiconductor substrate, and a blocking layer formed within the substrate at a given distance from the second major surface for blocking the passage of heavy metals through the semiconductor substrate.

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patent: 4564416 (1986-01-01), Homma et al.
patent: 4608096 (1986-08-01), Hill
patent: 4716451 (1987-12-01), Hsu et al.
patent: 4766086 (1988-08-01), Ohshima et al.
patent: 4920396 (1990-04-01), Shinohara et al.
patent: 5075751 (1991-12-01), Tomii et al.
Journal of Applied Physics "Gettering in Silicon", J. S Kang and D. K Schroder, vol. 65, pp. 2974-2985, Apr. 1989.
Solid State Technology, vol. 33, pp. S1-S7 "Contamination Control: Problems and Prospects", T. Hattori, Jul. 1990.

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