Semiconductor device capable of avoiding latchup breakdown...

Details Semiconductor device capable of avoiding latchup breakdown... Semiconductor device capable of avoiding latchup breakdown...

2007-01-17

2008-08-05

Ngo, Ngan (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S371000, C257SE27064

Reexamination Certificate

active

07408228

ABSTRACT:
A semiconductor device is provided which is capable of avoiding malfunction and latchup breakdown resulting from negative variation of high-voltage-side floating offset voltage (VS). In the upper surface of an n-type impurity region (28), a p+-type impurity region (33) is formed between an NMOS (14) and a PMOS (15) and in contact with a p-type well (29). An electrode (41) resides on the p+-type impurity region (33) and the electrode (41) is connected to a high-voltage-side floating offset voltage (VS). The p+-type impurity region (33) has a higher impurity concentration than the p-type well (29) and is shallower than the p-type well (29). Between the p+-type impurity region (33) and the PMOS (15), an n+-type impurity region (32) is formed in the upper surface of the n-type impurity region (28). An electrode (40) resides on the n+-type impurity region (32) and the electrode (40) is connected to a high-voltage-side floating supply absolute voltage (VB).

REFERENCES:
patent: 4922317 (1990-05-01), Mihara
patent: 6465283 (2002-10-01), Chang et al.
patent: 6864525 (2005-03-01), Kaneko et al.
patent: 6864543 (2005-03-01), Kaneko et al.
patent: 6881997 (2005-04-01), Kaneko et al.
patent: 6927442 (2005-08-01), Kaneko et al.
patent: 6967132 (2005-11-01), Gonzalez et al.
patent: 2002/0063298 (2002-05-01), Wang
patent: 2002/0195659 (2002-12-01), Jimbo et al.
patent: 2005/0045964 (2005-03-01), Henmi et al.
patent: 103 22 742 (2004-02-01), None
patent: 0 382 885 (1990-08-01), None
patent: 1 096 573 (2001-05-01), None
patent: 60-74560 (1985-04-01), None
patent: 62-120063 (1987-06-01), None
patent: 11-68053 (1989-07-01), None
patent: 5-152523 (1993-06-01), None
patent: 2002-252333 (2002-09-01), None
patent: 2001-0040186 (2001-05-01), None

Affiliated with

Also associated with

Rating

Semiconductor device capable of avoiding latchup breakdown... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device capable of avoiding latchup breakdown..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device capable of avoiding latchup breakdown... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4018348