Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Reexamination Certificate
2011-01-25
2011-01-25
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
C257SE23080
Reexamination Certificate
active
07875972
ABSTRACT:
Disclosed is a multilayer thermal interface material which includes a first layer of metallic thermal interface material, a buffer layer and preferably a second layer of thermal interface material which may be metallic or nonmetallic. The multilayer thermal interface material is used in conjunction with a semiconductor device assembly of a chip carrier substrate, a heat spreader for attaching to the substrate, a semiconductor device mounted on the substrate and underneath the heat spreader and the multilayer thermal interface material interposed between the heat spreader and the semiconductor device. The heat spreader has a first coefficient of thermal expansion (CTE), CTE1, the buffer layer has a second CTE, CTE2, and the semiconductor device has a third CTE, CTE3, wherein CTE1>CTE2>CTE3.
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Jadhav Virendra R.
Sikka Kamal K.
Zheng Jiantao
Blecker Ira D.
International Business Machines - Corporation
Li Wenjie
Potter Roy K
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