Semiconductor device and wiring method for semiconductor device

Details Semiconductor device and wiring method for semiconductor device Semiconductor device and wiring method for semiconductor device

2005-10-07

2009-06-02

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S903000

Reexamination Certificate

active

07541655

ABSTRACT:
A semiconductor device includes: a first circuit in which a diffusion area A1, a first gate G1, a diffusion area A2, a second gate G2and a diffusion area A3constitute two transistors; and a second circuit in which a diffusion area B1, the first gate G1, a diffusion area B2, the second gate G2and a diffusion area B3constitute two transistors. The diffusion areas A1and B3, the diffusion areas A2and B2and the diffusion areas A3and B1are connected. Alternatively, the diffusion areas A1, A3and B2and the diffusion areas A2, B1and B3are connected.

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Korean office action mailed on Oct. 17, 2006 in corresponding Korean patent application No. 10-2005-0103738.

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