Semiconductor device and two-layer lead frame for it

Details Semiconductor device and two-layer lead frame for it Semiconductor device and two-layer lead frame for it

1997-11-28

1998-10-13

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Die bond

257782, 257666, 257784, H01L 2312

Patent

active

058216286

ABSTRACT:
By employing the structure that in a two-layer lead frame comprising a lamination layer of lead portions and a metal layer, the thickness of an adhesive layer for fixing the a semiconductor element to the adhesive layer is defined to be from 100 to 350 .mu.m and the semiconductor element is buried in the adhesive layer in a depth of at least 1/3o the thickness of the semiconductor element, the extent of the unevenness in the resin-sealed region is reduced and the occurrences of die shift and void are restrained.

REFERENCES:
patent: 5252855 (1993-10-01), Ogawa et al.
patent: 5691567 (1997-11-01), Lo et al.
patent: 5742096 (1998-04-01), Lee

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