Semiconductor device and transistor

Details Semiconductor device and transistor Semiconductor device and transistor

2011-02-08

2011-02-08

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S330000, C257SE29001, C257SE27091, C257SE27095, C257SE27155

Reexamination Certificate

active

07884418

ABSTRACT:
A semiconductor device includes active areas which are insulatedly separated from each other by element-separation insulating films; a gate insulating film formed on each active area; a gate electrode which extends across the active area via the gate insulating film; a source area and a drain area formed in the active area so as to interpose the gate electrode; and a fin-channel structure in which at the intersection between the active area and the gate electrode, trenches are provided at both sides of the active area, and part of the gate electrode is embedded in each trench via the gate insulating film, so that the gate electrode extends across a fin which rises between the trenches. In the gate insulating film, the film thickness of a part which contacts the bottom surface of each trench is larger than that of a part which contacts the upper surface of the fin.

REFERENCES:
patent: 6444528 (2002-09-01), Murphy
patent: 7553748 (2009-06-01), Jang et al.
patent: 05-343681 (1993-12-01), None
patent: 11-068069 (1999-03-01), None
patent: 2002-151688 (2002-05-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2631606