Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2004-12-03
2008-03-18
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S775000, C257S776000, C257S781000, C257S782000, C257S784000, C257S792000, C257S793000, C257S626000, C257S632000, C257S688000, C257SE27010
Reexamination Certificate
active
07345368
ABSTRACT:
A semiconductor device has a semiconductor substrate having first and second surface, a first resin film formed on the first surface of the semiconductor substrate and a second resin film formed on the second surface of the semiconductor substrate. A projection electrode or an interconnection is formed on the first surface of the semiconductor substrate, the second resin film is made of low elastic resin which is capable of absorbing an impact applied to the second surface of the semiconductor substrate and the second resin film is thinner than the semiconductor substrate.
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Clark Jasmine
Hamre Schumann Mueller & Larson P.C.
Rohm & Co., Ltd.
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