Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2006-10-03
2006-10-03
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S201000, C365S189011, C365S189060, C365S189120
Reexamination Certificate
active
07116592
ABSTRACT:
Data read out from each memory cell in a memory cell array is compared with an expected value by a comparator, and the quality of a memory cell is determined by performing program verify and erase verify. Based on the comparison result of the comparator, a detected defective cell is repaired by replacing it with a spare cell. Every time a defective cell is replaced with a spare cell, information on the defective cell is stored in a register, and whether a defective cell exists and whether the repair is possible are determined on the basis of the information. When the repair is possible, a control circuit is caused to execute control, and a detected defective cell is repaired by replacing it with a spare cell. When the repair is impossible, the defect repair stops.
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Hirata Yoshiharu
Kuzuno Naokazu
Takeda Shinji
Elms Richard
Kabushiki Kaisha Toshiba
Luu Pho M.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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