Semiconductor device and test method thereof

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S201000, C365S189011, C365S189060, C365S189120

Reexamination Certificate

active

07116592

ABSTRACT:
Data read out from each memory cell in a memory cell array is compared with an expected value by a comparator, and the quality of a memory cell is determined by performing program verify and erase verify. Based on the comparison result of the comparator, a detected defective cell is repaired by replacing it with a spare cell. Every time a defective cell is replaced with a spare cell, information on the defective cell is stored in a register, and whether a defective cell exists and whether the repair is possible are determined on the basis of the information. When the repair is possible, a control circuit is caused to execute control, and a detected defective cell is repaired by replacing it with a spare cell. When the repair is impossible, the defect repair stops.

REFERENCES:
patent: 6496417 (2002-12-01), Shiau et al.
patent: 2001/0024390 (2001-09-01), Fukuda
patent: 2004/0240249 (2004-12-01), Kuzuno et al.
patent: 2000-57795 (2000-02-01), None
patent: 2000-322898 (2000-11-01), None
patent: 2001-266589 (2001-09-01), None
patent: WO2002-037504 (2002-05-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and test method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and test method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and test method thereof will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3692989

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.