Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-19
2007-06-19
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S213000, C257S288000, C257SE23002
Reexamination Certificate
active
10960985
ABSTRACT:
Disclosed herewith is a semiconductor device improved to prevent withstand voltage defects that might occur in each MOSFET used therein and a system to be designed easily and prevented from withstand voltage defects that might occur in each semiconductor used therein. The system includes the first and second input circuits, each being constituted by MOSFETs manufactured in the same process. The first input circuit receives a voltage of a first signal inputted from a first external terminal and divided by first and second resistor means while the AC component of the input signal is transmitted to the input circuit through a capacitor disposed in parallel to the first resistor means. The second input circuit receives a second input signal inputted from a second external terminal and reduced in signal amplitude so as to become smaller than that of the first input signal. The system also includes a second semiconductor device corresponding to the first input circuit and a third semiconductor device corresponding to the second input circuit.
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Kanetani Kazuo
Kazama Hideto
Nambu Hiroaki
Negishi Takemi
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Hitachi Ltd
Quinto Kevin
Reed Smith LLP
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