Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2001-05-09
2009-10-13
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S759000, C257S760000, C257SE21277, C438S789000, C438S790000
Reexamination Certificate
active
07602048
ABSTRACT:
The object of the present invention is to improve the interfacial adhesion between the film with low dielectric constant and protective film, without damaging the excellent dielectric, flatness and gap-filling characteristics of the organic material of low dielectric constant, and for that purpose there is provided a wiring structure with the copper film embedded in the insulation film of the wiring layer, wherein the insulation film of the wiring layer is of a multi-layered structure with the laminated methyl silsesquioxane (MSQ) film, methylated hydrogen silsesquioxane (MHSQ) film and silicon oxide film.
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Japanese Office Action dated Jul. 23, 2008 with a partial English translation.
Maldonado Julio J
McGinn IP Law Group PLLC
NEC Electronics Corporation
Smith Matthew
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