Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-09-02
2010-10-26
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C257S317000, C257SE29112, C257SE29129, C257SE29135
Reexamination Certificate
active
07821054
ABSTRACT:
A semiconductor device includes a semiconductor substrate, a first and second semiconductor regions formed on the semiconductor substrate insulated and separated from each other, a gate dielectric film formed on the substrate to overlap the first and second semiconductor regions, a floating gate electrode formed on the gate dielectric film and in which a coupling capacitance of the first semiconductor region is larger than that of the second semiconductor region, first source and drain layers formed on the first semiconductor region to interpose the floating gate electrode therebetween, a first and second wiring lines connected to the first source and drain layers, respectively, second source and drain layers formed on the second semiconductor region to interpose the floating gate electrode therebetween, and a third wiring line connected to the second source and drain layers in common.
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Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Warren Matthew E
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