Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-09
2007-10-09
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
10924995
ABSTRACT:
Aspects of the invention can provide a semiconductor device and a semiconductor memory using the semiconductor device having a gate shape by which the width of the gate can be realized as designed even if relative shifts occur between the masks for forming the field regions and the gate patterns. The semiconductor device can include, in field regions, a gate (an H-type gate), a gate insulating film right under the gate, a body region right under the gate insulating film, and source/drain regions formed on both sides of and across the body region. The H-type gate can have a first section extending along the channel width direction on the field region, and a pair of second sections formed on both ends of the first section in the channel width direction and extending along the channel length direction, and is formed to be an H shape in plan view. Since a part of each of the pair of second sections of the H-type gate can be formed on a part of the field region having a constant length in the channel length direction, the channel width can be defined by the length of the first section.
REFERENCES:
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Crane Sara
Gebremariam Samuel A.
Seiko Epson Corporation
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