Semiconductor device and semiconductor integrated circuit...

Details Semiconductor device and semiconductor integrated circuit... Semiconductor device and semiconductor integrated circuit...

2010-04-26

2010-10-05

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S206000, C257S369000, C257SE27001

Reexamination Certificate

active

07808045

ABSTRACT:
The present invention provides a high speed and low power consumption LSI operable in a wide temperature range in which a MOS transistor having back gates is used specifically according to operating characteristics of a circuit.In the LSI, an FD-SOI structure having an embedded oxide film layer is used and a lower semiconductor region of the embedded oxide film layer is used as a back gate. A voltage for back gates in the logic circuits having a small load in the logic circuit block is controlled in response to activation of the block from outside of the block. Transistors, in which the gate and the back gate are connected to each other, are used for the circuit generating the back gate driving signal, and logic circuits having a heavy load such as circuit block output section, and the back gates are directly controlled according to the gate input signal.

REFERENCES:
patent: 6040610 (2000-03-01), Noguchi et al.
patent: 2004/0155281 (2004-08-01), Osada et al.
patent: 2006/0197111 (2006-09-01), Matsuzawa
patent: 10-340998 (1998-12-01), None
patent: 2000-131713 (2000-05-01), None
patent: 2004-207694 (2004-07-01), None
Tadahiro Kuroda et al., “A 0.9-V, 150-MHz, 10-mW, 4mm2, 2-D Discrete Cosine Transform Core Processor with Variable Threshold-Voltage (VT) Scheme”, IEEE Journal of Solid-State Circuits, vol. 31, No. 11, Nov. 1996, pp. 1770-1779.

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