Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Reexamination Certificate
2011-05-03
2011-05-03
Andújar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
C257S779000, C257S778000, C257S737000, C257S643000
Reexamination Certificate
active
07936075
ABSTRACT:
The present invention provides a semiconductor device for which thermal stress at mounting is reduced and a reduction in reliability with regard to moisture absorption is prevented. The semiconductor device includes a uppermost metal layer12, a solder bump17, metals15and16which connect an uppermost metal layer12and the solder bump17, and, a polyimide multilayer14having formed therein an opening14xin which the metals15and16are provided. The polyimide multilayer14includes a first polyimide layer14A and a second polyimide layer14B formed on the first polyimide layer14A. The second polyimide layer14B is softer than the first polyimide layer14A. A thermal stress at mounting is reduced by the second polyimide layer14B. Since the first polyimide layer14A has a higher strength than the second polyimide layer14B, even if cracking occurs in the second polyimide layer14B, the cracks are prevented from developing in the first polyimide layer14A.
REFERENCES:
patent: 6656826 (2003-12-01), Ishimaru
patent: 2002/0096764 (2002-07-01), Huang
patent: 03268393 (1991-11-01), None
patent: 06-177134 (1994-06-01), None
patent: 2000-183089 (2000-06-01), None
patent: 2002-110799 (2002-04-01), None
Andújar Leonardo
Foley & Lardner LLP
Renesas Electronics Corporation
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