Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-06
2011-11-01
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S396000, C257S547000, C257SE29020, C257SE29130, C257SE29267
Reexamination Certificate
active
08049286
ABSTRACT:
In the present invention, there is provided a semiconductor device including: element isolation regions formed in a state of being buried in a semiconductor substrate such that an element formation region of the semiconductor substrate is interposed between the element isolation regions; a gate electrode formed on the element formation region with an gate insulating film interposed between the gate electrode and the element formation region, the gate electrode being formed so as to cross the element formation region; and source-drain regions formed in the element formation region on both sides of the gate electrode, wherein a channel region made of the element formation region under the gate electrode is formed so as to project from the element isolation regions, and the source-drain regions are formed to a position deeper than surfaces of the element isolation regions.
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Japanese Office Action issued on Jun. 2, 2009 in connection with JP Application No. 2007-124264.
Japanese Office Action issued on Jun. 15, 2010 in connection with counterpart JP Application No. 2007-124264.
Chinese Office Action issued on Dec. 21, 2010 corresponding to counterpart Chinese Patent Application No. 2008-10095289.4.
Japanese Office Action issued on Jun. 15, 2010 corresponding to counterpart Japanese Patent Application No. 2007-124264.
SNR Denton US LLP
Sony Corporation
Warren Matthew E
LandOfFree
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