Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-01
2008-04-01
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S618000, C257S327000, C257S347000, C257SE29275, C257SE29137
Reexamination Certificate
active
11393750
ABSTRACT:
A semiconductor device may include at least one pair of fins on a semiconductor substrate. A channel region may be formed in each fin. The semiconductor device may further include a gate electrode corresponding to each pair of channel regions, a source contact plug electrically connected to each of at least one source formed on a respective fin concurrently, and a drain contact plug electrically connected to each of at least one drain formed on a respective fin concurrently.
REFERENCES:
patent: 7122871 (2006-10-01), Lee et al.
Byun Sung-jae
Hyun Jae-woong
Kim Suk-pil
Kim Won-joo
Lee Eun-Hong
Harness & Dickey & Pierce P.L.C.
Ho Tu-Tu
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