Semiconductor device and programming method

Details Semiconductor device and programming method Semiconductor device and programming method

2007-04-17

2007-04-17

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S185180, C365S185200

Reexamination Certificate

active

11126558

ABSTRACT:
The semiconductor device of the present invention includes at least one dummy cell of a programmed state proximately located to an edge of a reference cell array. Thus, the leak current does not flow when a data of the cell on the edge of the reference cell array is read out. The memory cell located around the center of the reference cell array has neighboring cells of the programmed state, and the leak current can be prevented when the data is read out from all the reference cells. Thus, the reference current can be supplied stably.

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