Semiconductor device and production process

Details Semiconductor device and production process Semiconductor device and production process

2006-10-17

2006-10-17

Owens, Douglas W. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C438S622000, C438S618000

Reexamination Certificate

active

07122899

ABSTRACT:
An ohmic resistance is present between two parts of a conductor layer so that the size of the ohmic resistance can be ascertained and/or a semiconductor region is present in or on a layer forming the dielectric. The conductor layer is structured into a gate contact, a source contact, and a drain contact so that a transistor function or switching function is possible in the semiconductor region. Such a configuration allows an attempt to analyze the circuit integrated in the chip to be detected.

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